PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
HGTG30N60B3D HGT4E30N60B3DS |
60A/ 600V/ UFS Series N-Channel IGBT 60A 600V UFS Series N-Channel IGBT 60A, 600V, UFS Series N-Channel IGBT 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL IGBT, TO-268AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
RJH60D1DPE-00-J3 RJH60D1DPE |
16 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D2DPE-00-J3 RJH60D2DPE |
20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
NXP Semiconductors N.V. Renesas Electronics Corporation
|
RJH60D3DPE-00-J3 RJH60D3DPE |
30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|